feb. 2009 1 c1 e2 c2e1 e2 g2 label 3-m5 nuts 2-6.5 mounting holes tab #110. t=0.5 17 48 13 94 23 23 17 29 +1.0 ?.5 21.2 7.5 16 7 16 7 16 80 0.25 4184 12 12 12 e1g1 4 20 (14) c2e1 e2 e2 g2 g1 e1 c1 circuit diagram tc measured point (base plate) CM100DY-24NF application general purpose inverters & servo controls, etc mitsubishi igbt modules CM100DY-24NF high power switching use ? i c ................................................................... 100a ? v ces ......................................................... 1200v ? insulated type ? 2-elements in a pack outline drawing & circuit diagram dimensions in mm
feb. 2009 2 v ce = v ces , v ge = 0v v ge = v ges , v ce = 0v t j = 25 c t j = 125 c v cc = 600v, i c = 100a, v ge = 15v v cc = 600v, i c = 100a v ge = 15v r g = 3.1 ? , inductive load i e = 100a i e = 100a, v ge = 0v igbt part (1/2 module) fwdi part (1/2 module) case to heat sink, thermal compound applied *2 (1/2 module) case temperature measured point is just under the chips i c = 10ma, v ce = 10v i c = 100a, v ge = 15v v ce = 10v v ge = 0v 1200 20 100 200 100 200 650 ?0 ~ +150 ?0 ~ +125 2500 2.5 ~ 3.5 3.5 ~ 4.5 310 mitsubishi igbt modules CM100DY-24NF high power switching use v v a a a a w c c v rms n ?m n ?m g 1 0.5 2.5 23 2 0.45 120 80 450 350 150 3.2 0.19 0.35 0.13 *3 31 ma a nf nf nf nc ns ns ns ns c v k/w k/w k/w k/w ? 1.8 2.0 675 5.0 0.07 3.1 7v v 68 ns collector cutoff current gate leakage current input capacitance output capacitance reverse transfer capacitance t otal gate charge t urn-on delay time t urn-on rise time t urn-off delay time t urn-off fall time reverse recovery time reverse recovery charge emitter-collector voltage contact thermal resistance thermal resistance external gate resistance gate-emitter threshold voltage collector-emitter saturation voltage thermal resistance *1 i ces i ges c ies c oes c res q g t d(on) t r t d(off) t f t rr ( note 1 ) q rr ( note 1 ) v ec( note 1 ) r th(j-c) q r th(j-c) r r th(c-f) r th(j-c? q r g symbol parameter v ge(th) v ce(sat) * 1 : case temperature (tc) measured point is shown in page outline drawing. * 2 : typical value is measured by using thermally conductive grease of = 0.9[w/(m ?k)]. * 3 : case temperature (tc? measured point is just under the chips. if you use this value, r th(f-a) should be measured just under the chips. note 1. i e , v ec , t rr & q rr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (fwdi). 2. pulse width and repetition rate should be such that the device junction temperature (t j ) does not exceed t jmax rating. 3. junction temperature (t j ) should not increase beyond 150 c. collector-emitter voltage gate-emitter voltage maximum collector dissipation junction temperature storage temperature isolation voltage w eight g-e short c-e short dc, t c ?= 113 c *3 pulse (note 2) pulse (note 2) t c = 25 c terminals to base plate, f = 60hz, ac 1 minute main terminals m5 screw mounting m6 screw t ypical value symbol parameter collector current emitter current t orque strength conditions unit ratings v ces v ges i c i cm i e ( note 1 ) i em ( note 1 ) p c ( note 3 ) t j t stg v iso unit t yp. limits min. max. maximum ratings (tj = 25 c, unless otherwise specified) electrical characteristics (tj = 25 c, unless otherwise specified) test conditions
feb. 2009 3 mitsubishi igbt modules CM100DY-24NF high power switching use performance curves 200 160 40 120 80 0 04681 0 output characteristics (typical) collector current i c (a) collector-emitter voltage v ce (v) t j = 25c 12 11 10 9 v ge = 20v 2 15 13 4 3 2 1 0 0 200 150 100 collector-emitter saturation voltage characteristics (typical) collector-emitter saturation voltage v ce (sat) (v) collector current i c (a) v ge = 15v t j = 25c t j = 125c 50 10 8 6 4 2 0 20 12 14 6810 16 18 gate-emitter voltage v ge (v) collector-emitter saturation voltage characteristics (typical) collector-emitter saturation voltage v ce (sat) (v) t j = 25c i c = 200a i c = 40a i c = 100a 10 1 2 3 5 7 10 2 2 3 5 7 10 3 012 4 35 free-wheel diode forward characteristics (typical) emitter current i e (a) emitter-collector voltage v ec (v) t j = 25c t j = 125c 10 ? 10 0 10 ? 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 2 10 0 357 2 10 1 357 2 10 2 357 capacitance? ce characteristics (typical) capacitance c ies , c oes , c res (nf) collector-emitter voltage v ce (v) c ies c oes c res v ge = 0v 10 0 10 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 10 1 10 2 57 10 3 23 57 23 half-bridge switching characteristics (typical) switching time (ns) collector current i c (a) conditions: v cc = 600v v ge = 15v r g = 3.1? t j = 125c inductive load t d(off) t d(on) t f t r
feb. 2009 4 mitsubishi igbt modules CM100DY-24NF high power switching use 10 1 10 2 23 57 10 3 23 57 10 1 10 2 2 3 5 7 10 3 2 3 5 7 t rr i rr reverse recovery characteristics of free-wheel diode (typical) emitter current i e (a) reverse recovery time t rr (ns) reverse recovery current l rr (a) conditions: v cc = 600v v ge = 15v r g = 3.1? t j = 25c inductive load 10 ? 10 ? 10 ? 10 0 7 5 3 2 10 ? 7 5 3 2 10 ? 7 5 3 2 10 ? 23 57 23 57 23 57 23 57 10 1 10 ? 10 ? 10 0 10 ? 10 ? 7 5 3 2 10 ? 7 5 3 2 10 ? 23 57 23 57 single pulse t c = 25c transient thermal impedance characteristics (igbt part & fwdi part) normalized transient thermal impedance z th (j?) time (s) igbt part: per unit base = r th(j c) = 0.19k / w fwdi part: per unit base = r th(j c) = 0.35k / w 0 4 8 16 12 20 0 400 200 800 1000 600 gate charge characteristics (typical) gate-emitter voltage v ge (v) gate charge q g (nc) v cc = 600v v cc = 400v i c = 100a
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